kw.\*:("CENTRE RECOMBINAISON")
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NON-RADIATIVE RECOMBINATION CENTERS IN GAAS0.6P0.4 RED LIGHT-EMITTING DIODES.FORBES L.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 7-8; PP. 635-640; BIBL. 21 REF.Article
ZUM NACHWEIS VON MINORITAETSTRAEGER-TRAPS IN HALBLEITERN = MISE EN EVIDENCE DES PIEGES DE PORTEURS MINORITAIRES DANS LES SEMI-CONDUCTEURSLEMKE H.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. 539-545; ABS. ENG; BIBL. 6 REF.Article
CURRENT AND CAPACITANCE TRANSIENT RESPONSES OF MOS CAPACITOR. II. RECOMBINATION CENTERS IN THE SURFACE SPACE CHARGE LAYERSAH CT; FU HS.1972; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1972; VOL. 14; NO 1; PP. 59-70; ABS. ALLEM.; BIBL. 9 REF.Serial Issue
GOLD AS AN OPTIMAL RECOMBINATION CENTER FOR POWER RECTIFIERS AND THYRISTORS.DUDECK I; KASSING R.1977; SOLID-STATE ELECTRON.; G.B.; DA. 1977; VOL. 20; NO 12; PP. 1033-1036; BIBL. 11 REF.Article
DEEP-LEVEL DEFECTS IN RED GAAS1-XPX LIGHT-EMITTING DIODES.FORBES L; VAUGHN CK.1974; PROC. I.E.E.E.; U.S.A.; DA. 1974; VOL. 62; NO 4; PP. 534-535; BIBL. 18 REF.Article
ATOMES D'IMPURETE DANS LE GERMANIUM, CENTRES DE RECOMBINAISON DES DEFAUTS D'IRRADIATION PRIMAIRESBELOBORODKO BA; VASIL'EVA ED; EMTSEV VV et al.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 11; PP. 2041-2042; BIBL. 5 REF.Article
Vitesse de recombinaison par l'intermédiaire d'un centre à plusieurs niveaux (à plusieurs charges)EVSTROPOV, V. V; KISELEV, K. V; PETROVICH, I. L et al.Fizika i tehnika poluprovodnikov. 1984, Vol 18, Num 5, pp 902-912, issn 0015-3222Article
Effet de la passivation thermique sur l'efficacité des cellules solaires polycristallines du siliciumBILYALOV, R. R; CHIRVA, V. P.Geliotehnika (Taškent). 1989, Num 1, pp 3-6, issn 0130-0997, 4 p.Article
New exciton mechanism decreasing recombination lossesKARAZHANOV, S. ZH.Applied solar energy. 1995, Vol 31, Num 4, pp 25-32, issn 0003-701XArticle
Explanation of positive and negative PICTS peaks in SI-GaAsSCHMERLER, S; HAHN, T; HAHN, S et al.Journal of materials science. Materials in electronics. 2008, Vol 19, issn 0957-4522, S328-S332, SUP1Conference Paper
EBIC/TEM STUDIES ON THE RELATION BETWEEN ELECTRICAL PROPERTIES, CRYSTALLOGRAPHIC STRUCTURE, AND INTERACTION WITH POINT DEFECTS OF EPITAXIAL STACKING FAULTS IN SILICONKITTLER M; BUGIEL E.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 1; PP. 79-89; ABS. GER; BIBL. 10 REF.Article
NEUTRALISATION DES CENTRES DE RECOMBINAISON PAR IMPLANTATION D'HYDROGENE ET D'AZOTE DANS LES STRUCTURES DIELECTRIQUES/SILICIUM.LAOU SD.1977; DGRST-7670661,; FR.; DA. 1977; PP. 1-12; H.T. 6; BIBL. 9 REF.; (RAPP. FINAL, ACTION CONCERTEE: COMPOSANTS CIRCUITS MICROMINIATURISES)Report
EXACT EQUIVALENT CIRCUIT MODEL FOR STEADY-STATE CHARACTERIZATION OF SEMICONDUCTOR DEVICES WITH MULTIPLE-ENERGY-LEVEL RECOMBINATION CENTERSCHAN PCH; SAH CT.1979; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1979; VOL. 26; NO 6; PP. 924-936; BIBL. 41 REF.Article
THE DETERMINATION OF INTERFACIAL AND BULK PROPERTIES OF GOLD IN M.O.S. STRUCTURES USING QUASIEQUILIBRIUM AND NON-STEADY-STATE LINEAR VOLTAGE-RAMP TECHNIQUESFARAONE L; NASSIBIAN AG; SIMMONS JG et al.1979; I.E.E. J. SOLID-STATE ELECTRON DEVICES; GBR; DA. 1979; VOL. 3; NO 5; PP. 121-126; BIBL. 20 REF.Article
SPECTRAL CHARACTERISTICS OF PHOTOELECTRIC CONVERTERS WITH IRREGULAR DISTRIBUTION OF DEFECTS IN THE BASEVINOGRADOVA EB; GOLOVNER GM; GORODETSKIJ SM et al.1978; GELIOTEKHNIKA, UZBEK. S.S.R.; S.S.S.R.; DA. 1978; NO 1; PP. 13-17; BIBL. 9 REF.Article
CHARACTERIZATION OF THERMALLY-INDUCED DEFECTS IN CZ-SI BY ROOM-TEMPERATURE PHOTOLUMINESCENCEKATSURA J; NAKAYAMA H; NISHINO T et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 1; PP. 712-715; BIBL. 13 REF.Article
RECOMBINATION LEVEL SELECTION CRITERIA FOR LIFETIME REDUCTION IN INTEGRATED CIRCUITSBALIGA BJ.1978; SOLID-STATE ELECTRON.; GBR; DA. 1978; VOL. 21; NO 8; PP. 1033-1038; BIBL. 9 REF.Article
ELECTRON MOBILITY AND MINORITY-CARRIER LIFETIME OF N-INP SINGLE CRYSTALS GROWN BY LIQUID-ENCAPSULATED CZOCHRALSKI METHODYAMAGUCHI M; SHINOYAMA S; UEMURA C et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 10; PP. 6429-6431; BIBL. 10 REF.Article
ON THE SENSITIVITY OF THE EBIC TECHNIQUE AS APPLIED TO DEFECT INVESTIGATIONS IN SILICONKITTLER M; SEIFERT W.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 66; NO 2; PP. 573-583; ABS. GER; BIBL. 30 REF.Article
LUMINESCENCE DE L'OXYDE D'ETAIN SNO2. ANALYSE ET APPLICATIONS.HUBERT D.1974; AO-CNRS-11336; FR.; DA. 1974; PP. 1-82; H.T. 32; BIBL. 5 P. 1/2; (THESE DOCT.-ING.; CLAUDE BERNARD LYON)Thesis
Gigantic splash of the weak optical radiation gain in intrinsic threshold photoconductive devices (photoresistors) upon an increase in the concentration of recombination centersKHOLODNOV, V. A.SPIE proceedings series. 1999, pp 98-115, isbn 0-8194-3305-5Conference Paper
Specific features of concentrated radiation by polycrystalline solar cellsABDURAKHMANOV, B. M; ALIEV, R; BILYALOV, R. R et al.Applied solar energy. 1996, Vol 32, Num 1, pp 1-6, issn 0003-701XArticle
Recombinaison Auger dans le germanium fortement dopéKARPOVA, I. V; PEREL, V. I; SYROVEGIN, S. M et al.Fizika i tehnika poluprovodnikov. 1989, Vol 23, Num 5, pp 826-831, issn 0015-3222Article
Blocking of recombination sites and photoassisted hydrogen evolution at surface-modified polycrystalline thin films of p-WSe2CABRERA, C. R; ABRUNA, H. D.Journal of physical chemistry (1952). 1985, Vol 89, Num 7, pp 1279-1285, issn 0022-3654Article
Investigations of the dose-dependent anomalous fading rate of feldspar from sedimentsBO LI; LI, Sheng-Hua.Journal of physics. D, Applied physics (Print). 2008, Vol 41, Num 22, issn 0022-3727, 225502.1-225502.15Article